Thin Film Solar Cell Materials; Diffusion Barrier Materials for Integrated Circuits
相關經歷
略
曾執行之計畫（國科會及各種產學計畫）
補助或委託機構
起迄年月
計畫名稱(計畫編號)
國科會
91/8/1~92/7/31
The Studies of Sputtered Epitaxial Cu-Se/In-Se Binary Compound Thin Films.
國科會
90/8/1~91/7/31
The Phase Transformation Studies of the Sputtered Amorphous TaSiN Thin Films.
國科會
88/8/1~89/7/31
The Growth mechanism and Device Fabrication of Photovoltaic Solar Cell Materials Polycrystalline CulnSe2 Thin Films.
國科會
87/8/1~88/7/31
Fabricaton of co-sputtered Cu and refractory metals metastable thin films and the studies of their microstructure evolution.
研 究 成 果 目 錄
期刊論文
1
A. Rockett, T.C. Lommasson, P.Campos, L.-C. Yang and H. Talieh, “Growth of CuInSe2 by Two Magnetron Sputtering Techniques,” Thin Solid films 171, (1989), P.109.
2
L.-C. Yang and A. Rocket, “Cu-Mo Contact to CuInSe2 for Improved Adhesion in Photovotaic Devices,” J. Appl. Phys., 75(2), (1994), P.1185.
3
H.Z. Xiao, L.-C. Yang and A. Rockett, “Structural, Optical and Electrical Properties of Epitaxial Chalcopyrite CuIn3Se5 Films,” J. Appl. Phys., 76(3), (1994), P.1503.
4
H.Z. Xiao, L.-C. Yang, S.L. Lai, Z. Ma and A. Rockett, “Structural Properties of Metastable Cu-Mo solid Solution Thin Films Synthesized by Magnetron Sputtering,” Scripta Metallurgica et Materialia, 32(3) , (1995), P. 353.
5
L.-C. Yang, H.Z. Xiao, A. Rockett, W. N. Shafarman and R. W. Birkmire, “The Growth by the Hybrid Sputtering and Evaporation Method and Microstructural Studies of CuInSe2 Films,” solar Energy Materials and Solar Cells, 36, (1995), P.445.
6
G. Ramanath, H.Z. Xiao. L.-C. Yang, A. Rockett and L.H. Allen, “Evolution of Microstructure in Nanocrystalline Mo-Cu Thin Films During Thermal Annealing,” J. Appl. Phys., 78(5), (1995), P. 2435.
7
G.S. Chen, S.T. Chen, L.-C. Yang and P.Y. Lee, "Evaluation of Single- and Multi-layered Amorphous Ta2N Thin as Barriers in Copper Metallization," J. Vac. Sci. Technol.A, 18(2), (2000), P.720.
8
G.S. Chen，J.J. Guo，C.K. Lin，Chen-Sheng Hsu，L.-C. Yang，J. S. Fang “Evaluation of radio-frequency sputter-deposited textured TiN thin films as diffusion barriers between copper and silicon” J. Vac. Sci. Technol., A 20(2), (2002), P.479.
研討會論文
1
A. Rockett, A. Agarwal, L.-C. Yang, E. Banda, G. Kenshole, C.J. Kiely, and H. Talieh, “Deposition of CuInSe2 by the Hybrid Sputtering and Evaporation Method,” Proc. of 21st IEEE Photovoltaic Specialists Conference, Orlendo, 1990, (IEEEE, New York,1990), P.764.
2
L.-C. Yang, L.J. Chou, A. Agarwal and A. Rockett, “Single Crystal and Polycrystalline CuInSe2 by the Hybrid Sputtering and Evaporation Method,” Proc. of 22nd IEEE Photovoltaic Specialists Conference, Las Vegas, 1991, (IEEE, New York, 1992), P.1185.
3
L.-C. Yang, L.J. Chou, and A. Rockett, “Sputtered CuInSe2 Polycrystalline and Epitaxial Films and Devices,” Proc. of 23rd IEEE Photovoltaic specialists Conference, Louisville, 1993, (IEEE, New York, 1993), P.505.
4
C.A. Mullan, C.J. Kiely, R.W. Devenish, L.-C. Yang and A.Rockett, “Electron Microscopy Studies of Epitaxial CulnSe2 Layers Grown on GaAs by a Hybrid Magnetron Sputtering Process,” Institute of Physics Conference, Series No.138 (1993), p305.
5
A. Rockett, G. Berry, D. Schroeder, H.Z. Xiao and L.-C. Yang, “Structure and Optoelectronic Properties of Single Crystal Epitaxial Cu(In1-x Gax)Se2 and Ordered Defect Compounds,” Proc. of 1st World Conference on Photovoltaic Energy Conversion, Hawaii, December ,1994.
專利、專書或專書論文
1
L.-C. Yang and A. Rocket, "Cu-Mo Contact to CuInSe2 for ImprovedAdhesion in Photovotaic Devices," J. Appl. Phys., 75(2), (1994), P.1185.
2
L.-C. Yang, H.Z. Xiao, A. Rockett, W. N. Shafarman and R. W. Birkmire, "The Growth by the Hybrid Sputtering and Evaporation Method and Microstructural Studies of CuInSe2 Films," solar Energy Materials and Solar Cells, 36, (1995), P.445.
3
G.S Chen, S.T. Chen, L.-C. Yang and P.Y. Lee, "Evaluation of Single- and Multi-layered Amorphous Ta2N Thin as Barriers in Copper Metallization," J. Vac. Sci. Technol.A, 18(2), (2000), P.720.
技術報告及其他
1
Rockett and L.-C. Yang, “Multi-Phase Back Contacts for CIS Solar Cells,” U.S. patent number: 5,477,088, Dec.19, 1995.
