教  師  基  本  資  料

姓名

陳伯宜

英文名

Bor-Yir Chen

性別

男

現(兼)職稱

副教授

聯絡電話

(05) 631-5471

E-mail

bychen@sunws.nfu.edu.tw

經 歷  &  專 長

主要學歷

高師大物理學士

清大材料碩士

清大材料博士

專長與研究領域

薄膜技術(半導體材料;薄膜電晶體元件之研製與理論分析)/能源材料(鎳氫電池;鋅空氣電池) /非破壞檢驗/物理

相關經歷

高師大物理系實習助教

雲林工專機械材料科

光華非晶矽工業股份有限公司研發部兼任研究員(新竹科學園區)

經濟部智慧財產局兼任外審委員

專利代理人

曾執行之計畫（國科會及各種產學計畫）

補助或委託機構

起迄年月

計畫名稱(計畫編號)

國科會

92/8/1~93/7/31

AB2型儲氫材料複合物以球磨法製備及其充放電性能之研。

國科會

91/8/1~92/7/31

黏結劑及添加劑對鋅空氣電池電極充放電性能之研究。

國科會

90/8/1~91/7/31

AB2型儲氫合金以機械合金法製備及其充放電性能之研究(II)。

國科會

90/7/1~91/2/28

PEO/Li-鹽固態電解質先期研究。

國科會

89/8/1~90/7/31

AB2型儲氫合金以機械合金法製備及其充放電性能之研究。

國科會

87/7/1~88/7/31

AB2型合金電極之熱處理對其充放電性能之研究。

國科會

86/8/1~87/8/31

AB2型合金電極之表面處理對其充放電性能之研究。

國科會

85/8/1~86/7/31

黏結劑及添加劑對AB2型合金電極充放電性能之研究。

國科會

81/8/1~82/7/31

射線檢測-移位攝影法研究。

研 究 成 果 目 錄

期 刊 論 文

1

B.Y. Chen（陳伯宜）, S.Z. Yang（楊祥之）, J.R. Chen（陳建瑞）“Effect of the Additives on the Electrochemical Performance of Zinc Electrodes”. 真空科技第19卷第3期P.107-112(2006).

2

Bor-Yir Chen（陳伯宜）, I-Sung Chen（陳義松）, Jiann-Ruey Chen（陳建瑞）“Effect of heat-treatment on electrochemical properties of Ti-Ni-Cr based hydrogen storage alloys for Ni/MH batteries”. 真空科技第19卷第3期P.101-106(2006).

3

陳伯宜 ¹, 林嘉柏 ²,陳建瑞 ²“高密度電漿化學氣相沉積法成長含氧氮化矽作為氫離子感應膜之研究” 真空科技第19卷第2期P.134-139(2006).

4

陳伯宜 , 魏琮修 ,陳建瑞  “以溶膠-凝膠法製備鈦酸鋇薄膜作為氫離子感應場效電晶體之研究” 真空科技第19卷第2期P.129-133(2006).

5

C. S. Hsu, H. H. Yu, and B. Y. Chen, March 2002, “Fabrication and investigation of the solid state polymer electrolyte films”, Journal of National Huwei Institute of Technology, 5, 72-85. ( NSC90-2815-C-150-007-E)

6

F.L. Jenq, J.R. Chen, B.Y. Chen and F.S. Yeh, 1997 “Simulation for the Microcrystalline Silicon Thin Film Transistors by Considering the Change of Acceptor-Like State and Microcrystal Grain Size Effect”, Jpn. J. Appl. Phys. V.36, 4246-4250. (SCI)

7

F.L. Jenq, J.R. Chen and B.Y. Chen, 1997 “Simulation for Microcrystal Gain Size Effect in the Microcrystalline Silicon Thin Film Transistors” Materials Chemistry and Physics Including Materials Science Communications 48, 207-211. (SCI)

8

B.Y. Chen, J.R. Chen, F.L. Jenq and C.S. Hong, 1996, "A Theoretical Analysis of Temperature Dependence on Hydrogenated Amorphous Silicon Thin-Film Transistors with Consideration of Resistance of the a-Si:H Film Layer as a Function of Temperature", Appl. Surf. Sci 100/101, 601-606. (SCI)

9

B.Y. Chen, W.H. Wu, J.R. Chen and C.S. Hong, 1995, "Temperature Dependence of Hydrogenated Silicon Thin-Film Transistors", J. Materials Science 30, 2254-2256. (SCI)

10

B.Y. Chen, J.R. Chen, F.L. Jenq and C.S. Hong, 1995, "A Theoretical Analysis of Temperature Dependence on Hydrogenated Amorphous Silicon Thin-Film Transistors", Materials Chemistry and Physics Including Materials Science Communications, Vol.42, pp.276-279.(SCI)

11

K.C. Hsu, B.Y. Chen, H.T. Hsu, K.C. Wang, T.R. Yew and H.L. Hwang, 1994, "Thin Film Transistors Made from Hydrogenated Microcrystalline Silicon", Jpn. J. Appl. Phys. 33, 639-642.(SCI)

12

B.Y. Chen, April 1988, ”Kinetics of the Thermal Oxidation of Wsi2 Thin-Film” , Journal of National Yuen-Lin Institute of Technology ,7,115-137(1988).

13

B.Y. Chen, May 1986, ”Investigation on Wsi2 Thin Film Oxidation by Si Radioactive Tracer Technique”, Journal of National Yuen-Lin Institute of Technology ,5, 407-419(1986).

14

J.R. Chen, B.Y. Chen, S.G. Wuu and Y.C. Lui, 1986, “Identification of Diffusing Species During Metal Silicide Oxidation by Rutherford Backscattering Spectrometry”, Nuclear Instruments and Methods in Physics Research B15, 280-284.(SCI)

研討會論文

1

廖士運，劉家瑋，邱敬富，方昭訓，陳伯宜，楊立中，蘇孝農，段安華，葉冠成，”透明導電膜AZO作為阻障層之研究”，全國電性研討會，國立虎尾科技大學，雲林，2008.12.12.

2

廖士運，劉家瑋，邱敬富，方昭訓，陳伯宜，楊立中，蘇孝農，段安華，葉冠成，”透明導電膜AZO作為阻障層之研究”，太陽能電池LED成果發表會，國立虎尾科技大學，雲林，2008.12.9.

3

廖士運，劉家瑋，邱敬富，方昭訓，陳伯宜，楊立中，蘇孝農，段安華，葉冠成，”超薄AZO阻障層特性探討”，2008年臺灣鍍膜科技協會年會，明道管理學院，彰化，2008.12.5-6.

4

B.Y. Chen（陳伯宜）, S.Z. Yang（楊祥之）, J.R. Chen（陳建瑞） “Effect of the Additives on the Electrochemical Performance of Zinc Electrodes”. ，2005年臺灣真空學會年會，國立虎尾科技大學，2006.2.17，真空科技第18卷第4期P.91(2006).

5

Bor-Yir Chen（陳伯宜）, I-Sung Chen（陳義松）, Jiann-Ruey Chen（陳建瑞）“Effect of heat-treatment on electrochemical properties of Ti-Ni-Cr based hydrogen storage alloys for Ni/MH batteries”. ，2005年臺灣真空學會年會，國立虎尾科技大學，2006.2.17， 真空科技第18卷第4期P.90(2006).

6

陳伯宜 ¹, 林嘉柏 ²,陳建瑞 ²“高密度電漿化學氣相沉積法成長含氧氮化矽作為氫離子感應膜之研究” ，2005年臺灣真空學會年會，國立虎尾科技大學，2006.2.17， 真空科技第18卷第4期P.89(2006).

7

陳伯宜 , 魏琮修 ,陳建瑞  “以溶膠-凝膠法製備鈦酸鋇薄膜作為氫離子感應場效電晶體之研究” ，2005年臺灣真空學會年會，國立虎尾科技大學，2006.2.17，真空科技第18卷第4期P.88(2006).

8

Wei-chiang Leea, Shin-kai Hsua, Jiann-Ruey Chena, Bor-Yir Chenb, Hsiu-Hua Lin, 2004,” Hydrogen ion-sensitive field effect transistor with silicon oxycarbide membrane deposited by Inductively Coupled Plasma method”, Proceeding of the 11th Symposium on Nano Device Technology (SNDT 2004), National Chiao Tung University, Hsinchu, Taiwan, May 11-13, 2004.PP.252.

9

J.R. Chen, I-Sung Chen and B.Y. Chen, 2001, “Effect of Heat-treatment on Electrochemical Properties of Ti-Ni-Cr Based Hydrogen Storage Alloys for Ni/MH Batteries”, Proceeding of the 4th International Symposium on Hydrogen Power- Theoretical and Engineering Solutions, HYPOTHESIS IV, Stralsund, Germany, September 9-14, 2001. pp.220-228. ( NSC 88 - 2216 - E – 150 - 003 -)

10

J.R. Chen, T.I. Tu and B.Y. Chen, 2001, “Investigation on the Performance of Ti-Zr-Ni-V Based Hydrogen Storage Alloys for Ni/MH Batteries”, Proceeding of the 4th International Symposium on Hydrogen Power- Theoretical and Engineering Solutions, HYPOTHESIS IV, Stralsund, Germany, September 9-14, 2001. pp.242-249.( NSC 89 - 2216 - E - 150 - 005 -)

11

B.Y Chen , J.R. Chen and I-Sung Chen, 2001, “Electrochemical Properties of Ti2Ni System Hydrogen Storage Alloys”, Proceeding of the 4th International Symposium on Hydrogen Power-Theoretical and Engineering Solutions, HYPOTHESIS IV, Stralsund, Germany, September 9-14, 2001. pp.235-241. ( NSC 88 - 2216 - E - 150 - 003 -)

12

B.Y. Chen , J.R. Chen and T.S. Lu, 2001, “Effect of the Hydrogen Storage Alloy by Binders and Additives on the Electrochemical Performance of Electrodes”, Proceeding of the 4th International Symposium on Hydrogen Power- Theoretical and Engineering Solutions, HYPOTHESIS IV, Stralsund, Germany, September 9-14, 2001. pp.229-234. ( NSC 86 - 2216 - E - 150 - 001 -)

13

J.R. Chen, G. Lien and B.Y. Chen, 2000, “The Effect of the Hydrogen Storage Alloy by Surface Modification on the Electrochemical Performance of Electrodes”, Proceeding of the International Hydrogen Energy Forum 2000 Policy; Business; Technology, Munich, Germany, September 11-15, 2000. pp.81-87. ( NSC 87 - 2216 - E - 150 - 003 -)

14

J.R. Chen, I.S. Chen and B.Y. Chen, 2000, “Charge and Discharge Performance of Ti2Ni Based Alloy Electrodes”, Proceeding of the International Hydrogen Energy Forum 2000 Policy; Business; Technology, Munich, Germany, September 11-15, 2000. ( NSC 88 - 2216 - E - 150 - 003 -)

15

B.Y. Chen, J.R. Chen and Huang-Chang Liang, 2000, “Charge and Discharge Performance of TiV1.6Ni0.4 Based Alloy Electrodes”, Proceeding of the International Hydrogen Energy Forum 2000 Policy; Business; Technology, Munich, Germany, September 11-15, 2000. pp.73-79. ( NSC 88 - 2216 - E - 150 - 003 -)

16

B.Y. Chen, J.R. Chen and T.I. Tu, 2000, “Effect of Alkali-treatment on Electrochemical Properties of Ti-Zr-Ni-V Based Hydrogen Storage Alloys for Ni/MH Batteries”, Proceeding of the International Hydrogen Energy Forum 2000 Policy; Business; Technology, Munich, Germany, September 11-15, 2000. pp.65-71. ( NSC 87 - 2216 - E - 150 - 003 -)

17

J. R. Chen and B. Y. Chen, 1999, “Charge and Discharge Performance of TiV1.6Ni0.4 Based Alloy Electrodes”, Proceeding of the 1st-Mini International Conference for Advanced Trends in Engineering, Minia, Egypt, March 14-17,1999.pp.223-235. ( NSC 88 - 2216 - E - 150 - 003 -)

18

B. Y. Chen and J. R. Chen, 1999, “The Effect of the Hydrogen Storage Alloy by Surface Modification on the Electrochemical Performance of Electrodes”, Proceeding of the 1st-Mini International Conference for Advanced Trends in Engineering, Minia, Egypt, March 14-17,1999.pp.210-222.( NSC 87 - 2216 - E - 150 - 003 -)

19

B. Y. Chen, J.R. Chen, F.L. Jenq and C.S. Hong,1995, “A Theoretical Analysis of Temperature Dependence on Hydrogenated Amorphous Silicon Thin-Film Transistors with the Consideration of Resistance of the a-Si:H Film Layer as a Function of Temperature”, in Applied Surface Science and Electronic Materials and Processing, Proceedings of the Sessions on Applied Surface Science and Electronic Materials and Processing of the 13th International Vacuum Congress and the 9th International Conference on Solid Surfaces, Yokohama, Japan 25-29 September 1995. Editors: A. Yoshimori, A. Hiraki and M. Kobayashi, Elsevier, Amsterdam, 1996. Vol.2, pp.601-606.

20

B.Y. Chen, J.R. Chen, F.L. Jenq, and C.S. Hong, 1995,"A Theoretical Analysis of Temperature Dependence on Hydrogenated Amorphous Silicon Thin-Film Transistors," Proc. Int. Union Mat. Res. Soc. pp. 523-528.

21

B.Y. Chen, W.H. Wu, J.R. Chen and C.S. Hong, 1994, "Temperature Dependence on Hydrogenated Silicon Thin-Film Transistors," Proc. of IUMRS-ICA Conference, pp.369-372.

22

B.Y. Chen, J.R. Chen, F.L. Jenq and C.S. Hong, 1994, "An Theoretical Analysis of Temperature Dependence on Hydrogenated Amorphous Silicon Thin-Film Transistors," IUMRS-ICEM, Final Program and Abstracts, p.126.

23

K.C. Hsu, B.Y. Chen, H.T. Hsu, K.C. Wang, T.R. Yew and H.L. Hwang, 1993, Hydrogenated Amorphous Silicon Thin Film Transistors Made by Novel Materials", ASID, pp.13-17.

24

K.C. Hsu, B.Y. Chen, H.T. Hsu, K.C. Wang, T.R. Yew and H.L. Hwang, 1993, "Hydrogenated Amorphous Silicon Thin Film Transistors Made by Novel Materials", Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, pp.434-436.

專利、專書或專書論文

1

陳長有,許振聲,陳伯宜, “機械工程實驗(I)-材料實驗”, 全華圖書公司出版.(1987)。

2

陳伯宜,”Investigation on Solid State Reaction between Tungsten Thin Film and Silicon, and on Wsi₂ Thin Film Oxidation”. 清華大學碩士論文(1983)。

3

陳伯宜,”Studies on Hydrogenated Amorphous Silicon Thin-Film Transistors”. 清華大學博士論文(1995)。

技術報告及其他

1

陳伯宜, “射線檢測-移位攝影法研究”, 國科會專題研究成果報告, 計畫編號: NSC 82- 115 - C - 150 - 515 - E. 82.7.31。

2

陳伯宜, “黏結劑及添加劑對AB2型合金電極充放電性能之研究”, 國科會專題研究成果報告, 計畫編號: NSC 86 - 2216 - E - 150 - 001 - . 86.7.31。

3

陳伯宜, “AB2型合金電極之表面處理對其充放電性能之研究”, 國科會專題研究成果報告, 計畫編號: NSC 87 - 2216 - E - 150 - 003 - . 87.7.31。

4

陳伯宜, “AB2型合金電極之熱處理對其充放電性能之研究”, 國科會專題研究成果報告, 計畫編號: NSC 88 - 2216 - E - 150 - 003 - . 88.7.31。

5

陳伯宜，“AB2型儲氫合金以機械合金法製備及其充放電性能之研究”, 國科會專題研究成果報告, 計畫編號: NSC 89 - 2216 - E - 150 - 005 - . 89.8.1--90.7.31。

6

陳伯宜，“PEO/Li-鹽固態電解質先期研究”, 國科會大專學生參與專題研究計畫成果報告, 計畫編號: NSC 90-2815-C-150-007-E, 90.7.1至91.2.28。

7

陳伯宜，“AB2型儲氫合金以機械合金法製備及其充放電性能之研究(II)”, 國科會專題研究成果報告, 計畫編號: NSC 90 - 2216 - E - 150 - 004 - . 90.8.1--91.7.31。

8

陳伯宜，“黏結劑及添加劑對鋅空氣電池電極充放電性能之研究”, 國科會專題研究成果報告, 計畫編號: NSC 91 - 2626 - E - 150 - 004 - . 91.8.1--92.7.31。

9

陳伯宜，“AB2型儲氫材料複合物以球磨法製備及其充放電性能之研究”, 國科會專題研究成果報告, 計畫編號: NSC 92- 2216 - E - 150 - 004 - .92.8.1--93.7.31。

其他參與活動

略

參加國際學術研討會

1

K.C. Hsu, B.Y. Chen, H.T. Hsu, K.C. Wang, T.R. Yew and H.L. Hwang, 1993, "Hydrogenated Amorphous Silicon Thin Film Transistors Made by Novel Materials", Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Hsinchu, Taiwan, pp.434-436.

2

B.Y. Chen, W.H. Wu, J.R. Chen and C.S. Hong, 1994, "Temperature Dependence on Hydrogenated Silicon Thin-Film Transistors," Proc. of IUMRS-ICA Conference,China, pp.369-372.

3

B. Y. Chen, J.R. Chen, F.L. Jenq and C.S. Hong,1995, “A Theoretical Analysis of Temperature Dependence on Hydrogenated Amorphous Silicon Thin-Film Transistors with the Consideration of Resistance of the a-Si:H Film Layer as a Function of Temperature”, in Applied Surface Science and Electronic Materials and Processing, Proceedings of the Sessions on Applied Surface Science and Electronic Materials and Processing of the 13th International Vacuum Congress and the 9th International Conference on Solid Surfaces, Yokohama, Japan 25-29 September 1995. Editors: A. Yoshimori, A. Hiraki and M. Kobayashi, Elsevier, Amsterdam, 1996. Vol.2, pp.601-606.

4

B. Y. Chen and J. R. Chen, 1999, “The Effect of the Hydrogen Storage Alloy by Surface Modification on the Electrochemical Performance of Electrodes”, Proceeding of the 1st-Mini International Conference for Advanced Trends in Engineering, Minia, Egypt, March 14-17,1999.pp.210-222.( NSC 87 - 2216 - E - 150 - 003 -).

5

B.Y. Chen, J.R. Chen and T.I. Tu, 2000, “Effect of Alkali-treatment on Electrochemical Properties of Ti-Zr-Ni-V Based Hydrogen Storage Alloys for Ni/MH Batteries”, Proceeding of the International Hydrogen Energy Forum 2000 Policy; Business; Technology, Munich, Germany, September 11-15, 2000. pp.65-71. ( NSC 87 - 2216 - E - 150 - 003 -).

6

B.Y. Chen , J.R. Chen and T.S. Lu, 2001, “Effect of the Hydrogen Storage Alloy by Binders and Additives on the Electrochemical Performance of Electrodes”, Proceeding of the 4th International Symposium on Hydrogen Power- Theoretical and Engineering Solutions, HYPOTHESIS IV, Stralsund, Germany, September 9-14, 2001. pp.229-234. ( NSC 86 - 2216 - E - 150 - 001 -).

7

Wei-chiang Leea, Shin-kai Hsua, Jiann-Ruey Chena, Bor-Yir Chenb, Hsiu-Hua Lin, 2004,” Hydrogen ion-sensitive field effect transistor with silicon oxycarbide membrane deposited by Inductively Coupled Plasma method”, Proceeding of the 11th Symposium on Nano Device Technology (SNDT 2004), National Chiao Tung University, Hsinchu, Taiwan, May 11-13, 2004.PP.252.

參與之學術團體 

1

中華民國非破壞檢測協會永久會員。

2

中華民國真空科技學會永久會員。

3

中國材料科學學會永久會員。

學術榮譽

1

獲邀擔任中國機械工程學會第十九屆全國學術研討會主持人，91年11月29日。

個人其他補充資料

1

非醫用游離輻射防護結業證書(75清字非醫字第549號)。

2

可發生游離輻射設備操作執照(初級,非醫人字第1876號)。

3

專利代理人證書(台代字第07487號)。

4

放射性物質或可發生游離輻射設備操作人員輻射安全證書(輻安證字第0五五五四號)。