T.K.Tsai*, C.C.Chuang, C.C.Chao, and W.L.Liu, “Growth and field emission of carbon nanofibers on electroless Ni-P alloy catalyst ” Diamond and Related Materials 12 (2003) 1453-1459
2
T.K.Tsai*, C.C.Chao,“The growth morphology and crystallinity of electroless NiP deposition on silicon”Applied Surface Science 233 (2004) 180-190
3
W.L.Liu, S.H.Hsieh*,T.K.Tsai, and W.J.Chen,“ Growth kinetics of electroless cobalt deposition by TEM”Journal of The Electrochemical Society 151(2004)C680-C683
4
C.M.Liu, W.L.Liu, S.H.Hsieh,T.K.Tsaiand W.J.Chen*, “Interfacial reactions of electroless nickel thin films on silicon”Applied Surface Science 243(2005) 259-264
5
C.M.Liu, W.L.Liu, W.J.Chen*, S.H.Hsieh, T.K.Tsaiand L.C. Yang,“ITO as a diffusion barrier between Si and Cu”Journal of The Electrochemical Society 152(2005) G234-239.
6
W. L. Liu, S. H. Hsieh, T. K. Tsai*, W. J. Chen, S. S. Wu, “Temperature and pH dependence of the electroless Ni-P deposition on silicon” Thin Solid Film 510 (2006) 102-106
7
W. L. Liu, W. J. Chen*, T. K. Tsai, H. H. Tsai,S. H. Hsieh,”Interface structure between epitaxial NiSi2 and Si” Journal of University of Science and Technology Beijing 13 (2006) 558-563
8
W.L.Liu,W.J.Chen*, T.K.Tsai, S.H.Hsieh, and C.M.Liu, “Effct of tin-doped indium oxide film thickness on the diffusion barrier between silicon and copper”Thin Solid Film 515 (2006) 2387-2392
S. S. Wu, W. L. Liu, T. K. Tsai*, S. H. Hsieh, W. J. Chen, “Growth behavior of electroless copper on silicon substrate” Journal of University of Science and Technology Beijing 14 (2007) 67-71
11
W. L. Liu, S. H. Hsieh,S. J. Hwang, T. K. Tsai, W. J. Chen, “Tribological properties of electroless Ni-P-SiC composite coatings in rolling/sliding contact under boundary lubrication” Journal of University of Science and Technology Beijing 14 (2007) 167-172
12
W.L.Liu,W.J.Chen, T.K.Tsai, S.H.Hsieh, and C.M.Liu, “Effct of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide”Applied Surface Science 253(2007) 5516-5520
13
W. J. Chen, W. L. Liu, S. H. Hsieh, T. K. Tsai, “Preparation of nanosized ZnO using αbrass” Applied Surface Science, 253(16), 15June 2007, 6749-6753.
14
W.L.Liu,W.J.Chen, T.K.Tsai, S.H.Hsieh, and S. Y. Chang, “Effct of nickel on the initial growth behavior of electroless Ni-Co-P alloy on silicon substrate”Applied Surface Science253(2007) 3843-3848
15
T. K. Tsai *, S. S. Wu, W. L. Liu , S. H. Hsieh , W. J. Chen, “Electroless CoWP as a Diffusion Barrier between Electroless Copper and Silicon”Journal of Electronic Materials, v.36, n.11(2007) p1408-1414.
16
T. K. Tsai *, S. S. Wu, C. S. Hsu, J.S. Fang,〝Effect of Phosphorus in Electroless CoWP film on the Diffusion Barrier between Electroless Copper and Silicon〞 submitted in Thin Solid Films 2008
研討會論文
1
蔡定侃, 朝春光 ” 鐵基複合材料之陶瓷強化材表面改質之研究 “ 2000年材料年會
2
T.K.Tsai, W.L.Liu, S.H.Hsieh, and Wen-Jauch Chen, “ Growth of carbon nanotubes on electroless Ni-P alloy catalyst ” 2002 MRS Fall Meeting.
3
W.L.Liu,T.K.Tsai, S.H.Hsieh, W.J.Chen, “Effect of phosphorus on the nickel silicide formation “ 2002年材料年會
4
謝淑惠, 劉偉隆, 蔡定侃, 陳文照, 江正輝, 江振貴 “The study of growth kinetics of electroless cobalt deposition by transmission electron microscope” 2002材料年會
5
T.K.Tsai, W.L.Liu, S.H.Hsieh, Wen-Jauch Chen, and H.S.Wu, “The growth morphology and mechanism of electroless NiP deposition on silicon” 2004年材料年會
6
T.K.Tsai, W.L.Liu, S.H.Hsieh,and Y.Q.Yao, “The study of the SnO2 thin film for gas senser using the electroless plating technology” 2004年材料年會
7
W.L. Liu , S.H. Hsieh, T. K. Tsai, and W.J. Chen, “A Method for Mass Production of Carbon Nanofibers by Thermal Chemical Vapor Deposition,” The 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Taiwan, November 2004
W. L. Liu, W. J. Chen, S. H. Hsieh, T. K. Tsai, and C. M. Liu, “Effect of Tin-doped Indium oxide film thickness on the Diffusion Barrier between Silicon and Copper” 209th Meeting of The Electrochemical Society, Denver, Colorado, U.S.A., May, 2006
11
W. L. Liu, W. J. Chen,S. H. Hsieh, and T. K. Tsai, “A Capillary Electrophoresis Chip for Rhodamine B and Inorganic Ion detection Utilizing Contactless Capacitance Detection” Nanotech 2006, Boston, Massachusetts, U.S.A., May.
吳信賢,蔡定侃,劉偉隆,謝淑惠,陳文照,”The intial deposition behavior of electroless copper deposition on silicon”中國材料年會,11月25-26日,成功大學,2006
14
T. K. Tsai *, S. S. Wu , W. L. Liu , S. H. Hsieh , W. J. Chen”Electroless CoWP as a Diffusion Barrier between Electroless Copper and Silicon” TMS 2007, Orlando, Florida, U.S.A. 25/2-1/3 March.
15
W. L. Liu, S. H. Hsieh, T. K. Tsai, W. J. Chen, “The effect of CNTs on the growth and particle sizes of TiO2on nano-composite TiO2/CNTs ”, 4th International Conference on Materials for Advanced Technologies, 1-6 July 2007, Singapore.
16
蔡定侃,吳信賢,劉偉隆,謝淑惠,陳文照,”The effect of the electroless CoWP film thickness on diffusion barrier properties”中國材料年會,11月16-17日,交通大學,2007
T. K. Tsai, H.C. Chen, J. H. Lee, J. S. Fang,”High conductivity Indium Zinc Oxide prepared by Reavtive Magnetron Co-sputtering Technique from Indium and Zinc Metallic Target” THIN FILMS 2008,13-16, july, 2008, Singapore
T. K. Tsai *, J. H. Lee, S. S. Wu, J.S. Fang, "Failure behavior of electroless CoWP film as a diffusion barrier between electroless Cu and Si"2009 TMS Annual Meeting & Exhibition, February 15-19, 2009 , San Francisco, California, USA
23
W. H. Luo, T. K. Tsai, J. S. Fang, " Ehancement in Conductivity and Transmittance of Zinc Oxide Prepared by Chemical Bath Deposition"2009 TMS Annua l Meeting & Exhibition, February 15-19, 2009 , San Francisco, California, USA
專利、專書或專書論文
1
"含有FE-NI奈米粒子之粉體及其製造方法"專利號碼: US 7, 247,376 B1專利期間: 2004.06.17~2024.06.17
技術報告及其他
略
其他參與活動
略
參加國際學術研討會
1
MRS Fall Meeting 2002
2
The 3rd Asian Conference on Chemical Vapor Deposition, Taipei, Taiwan, November 2004
3
209th Meeting of The Electrochemical Society, Denver, Colorado, U.S.A., May, 2006